Odyessy Semi Reaches 1200V Rating on Vertical GaN Power Devices

Odyessy Semiconductor Technologies in September announced that it had reached the goal of 1200V rating on vertical GaN power field-effect transistors (FETs).

The company develops high-voltage power-switching components based on proprietary Gallium Nitride (GaN) processing technology. The company now is applying this validated technology to fabricate product samples in the last quarter of 2022 for internal and customer evaluations through the first quarter of 2023.

Demonstration of New More Energy-Efficient Devices Using GaN

In a study at the University of North Carolina, engineering researchers have developed more energy-efficient devices than previous technologies. The technique, called “doping,” is done with Gallium Nitride (GaN) in a controlled setting. In this new paper, the researchers have used the technique to create actual devices. Particularly, the team used selectively doped GaN materials to create Junction Barrier Schottky (JBS) diodes.

“Many technologies require power conversion – where power is switched from one format to another,” says Dolar Khachariya, the first author of a paper on the work

Researchers Reduce Power Consumption by Half in Semiconductor Devices

The team at Pohang University of Science and Technology (POSTECH), in Pohang, South Korea, has reduced power consumption in semiconductor devices by half, by embedding platinum nanoparticles.

The technique the team had said was like laying stepping stones across a stream. As long as the stones went from one side to another, getting across the stream was easy.

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Editor's Desk by Stephen Vicinanza

GaN vs SiC

There are a number of companies involved in having pushed either Gallium Nitride (GaN) materials for power systems, or Silicon Carbide (SiC) materials for power systems. Over the past three weeks or so, there has been quite a bit of movement in both these sectors

Vertical GaN has been gaining a great deal of traction of late, with companies taking on the metal in many of there development projects, such as Odyessy are starting to advertise a great deal, and send out press releases on just how deep they have gotten into the GaN world. These building blocks are the functional equivalent of miniaturizing the IC back in the 1980s. It will be seen if it will take another twenty years to become the standard.

Until then, SiC is becoming a more widespread material being used in the manufacture of electronics. The larger companies such as Microchip and

Renesas are releasing new SiC-based products all the time, and going into partnerships and collaborations with many manufacturers of larger devices. While GaN is the future, the developers of today are still holding onto what they know.

Join us next week as we take a dive into what is happening on our Microcontroller Watch. I am always available for questions just reach out to product-editor@circuitcellar.com

MiniPC taps 11th gen Jasper Lake processor and supports dual GbE ports

The BMAX B3 Plus is a MiniPC equipped with the Celeron 4-Core N5095. This product is enabled with dual-band Wi-Fi 5, triple 4K@60Hz displays, dual GbE LAN ports, and ships with Windows 11 Pro.