The Latest in gallium nitride on silicon (GaN-on-Si) HEMTs (high electron mobility transistors) represent a dramatic improvement in power conversion switching device figure of merit (FOM) with outstanding sytem performance enabling higher efficiency, power density and reduced system cost.
This white paper describes the comprehensive four-per process that is used to successfully qualify this new technology and products. Key failure mechanisms are described, and the means to ensure safe and reliable operation in a wide variety of applications are provided. | 
