Two-dimensional (2D) materials could offer new building blocks for future technologies, but this requires approaches to control the carrier type in 2D semiconductors. A number of pioneering works have demonstrated different methods to program the carrier type in 2D materials, such as electrostatic doping, chemical doping, ion implantation, charge transfer, and annealing control. Recently, a team of researchers have developed a technique to dope 2D materials for redefinable nanoelectronics using nonvolatile ferroelectric domains.
